منابع مشابه
Implementation of EIS for dopant profile analysis in n-type silicon
An experimental setup has been developed for successive photo-electrochemical etch and EIS measurement of semiconductor samples. Furthermore an algorithm based on electrochemical capacitance-voltage (ECV) has been developed for calculating dopant profile based on the measurements by developed setup. Phosphorous diffusion profile in p-type silicon was estimated by employing developed setup and a...
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We introduce a new class of spin-on dopants composed of organic, dopant-containing polymers. These new dopants offer a hybrid between conventional inorganic spin-on dopants and a recently developed organic monolayer doping technique that affords unprecedented control and uniformity of doping profiles. We demonstrate the ability of polymer film doping to achieve both p-type and n-type silicon by...
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Dopant impurities were implanted at high dose and low energy (10 cm, 0.5–2.2 keV) into double-side polished 200 mm diameter silicon wafers and electrically activated to form p–n junctions by 10 s anneals at temperatures of 1,025, 1,050, and 1,075 C by optical heating with tungsten incandescent lamps. Activation was studied for P, As, B, and BF2 species implanted on one wafer side and for P and ...
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Silicon field-effect transistors have now reached gate lengths of only a few tens of nanometers, containing a countable number of dopants in the channel. Such technological trend brought us to a research stage on devices working with one or a few dopant atoms. In this work, we review our most recent studies on key atom devices with fundamental structures of silicon-on-insulator MOSFETs, such as...
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ژورنال
عنوان ژورنال: MATERIALS TRANSACTIONS
سال: 2010
ISSN: 1345-9678,1347-5320
DOI: 10.2320/matertrans.mc200910